The intrinsic quantum anomalous Hall effect in TaPdXTe (X = S, Se) monolayers-Reference-Cited by-同舟云学术

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The intrinsic quantum anomalous Hall effect in TaPdXTe (X = S, Se) monolayers

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wei Haofeng¹,Wu Yanzhao¹,Tong Junwei²,Deng Li¹,Yin Xiang¹,Zhang Zhijun³,Zhang Xianmin¹^ORCID

Affiliation:

1. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang, 110819, China

2. Department of Physics, Freie Universität Berlin, Berlin, 14195, Germany

3. Liaoning Institute of Science and Technology, Benxi 117004, China

Abstract

The search for high-performance intrinsic quantum anomalous Hall (QAH) insulators is crucial for the development of topological electronics.

Funder

Liaoning Revitalization Talents Program

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02809K

Reference56 articles.

1. Direct evidence of ferromagnetism in a quantum anomalous Hall system

2. Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions

3. Quantum anomalous Hall effect in magnetic topological insulators

4. Quantum Anomalous Hall Effect with Higher Plateaus

5. Monolayer of the 5d transition metal trichloride OsCl3 : A playground for two-dimensional magnetism, room-temperature quantum anomalous Hall effect, and topological phase transitions

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