Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions-Reference-Cited by-同舟云学术

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Published:2015-05-07 Issue:17 Volume:117 Page:17C707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Saito Y.,Ishikawa M.,Sugiyama H.,Inokuchi T.,Hamaya K.,Tezuka N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907242

Reference27 articles.

1. Electrical creation of spin polarization in silicon at room temperature

2. Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

3. Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

4. Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system

5. Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements

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