High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2434150
Reference10 articles.
1. Tuning of the metal-insulator transition in La0.75Sr0.25MnO3∕PrBa2Cu3O7−δ superlattices
2. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering
3. Low-Voltage Organic Transistors and Depletion-Load Inverters With High-K Pyrochlore BZN Gate Dielectric on Polymer Substrate
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
5. ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators
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