Plasma‐enhanced chemical vapor deposited SiO2/InP interface

Author:

Wager J. F.,Wilmsen C. W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation of SiO2 thin films through plasma- enhanced chemical vapor deposition using SiH4/Ar/N2O;Thin Solid Films;2024-05

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3. Engineering Defects and Interfaces of Atomic Layer-Deposited TiOx-Protective Coatings for Efficient III–V Semiconductor Photocathodes;ACS Photonics;2023-10-20

4. Selective epitaxy of InP/GaInP quantum dots using SiO2 mask;INTERNATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF COMBUSTION AND PROCESSES IN EXTREME ENVIRONMENTS (COMPHYSCHEM’20-21) and VI INTERNATIONAL SUMMER SCHOOL “MODERN QUANTUM CHEMISTRY METHODS IN APPLICATIONS”;2020

5. A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching;IEEE Transactions on Nanotechnology;2017-03

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