Effects of ionizing radiation on thin‐oxide (20–1500 Å) MOS capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663150
Reference13 articles.
1. Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
2. Interface States of MOS Diodes with Thin SiO2Films
3. Interface States of MOS Diodes with Thin SiO2Films
4. Surface states at steam-grown silicon-silicon dioxide interfaces
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