Characterization of thin AlGaAs/InGaAs/GaAs quantum‐well structures bonded directly to SiO2/Si and glass substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343850
Reference8 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
3. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
4. Dislocation reduction in epitaxial GaAs on Si(100)
5. Extreme selectivity in the lift‐off of epitaxial GaAs films
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