Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping-Reference-Cited by-同舟云学术

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

Published:2017-07-24 Issue:4 Volume:111 Page:043502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Yajun¹,Long Mingsheng¹,Gao Anyuan¹^ORCID,Wang Yu¹,Pan Chen¹,Liu Xiaowei¹,Zeng Junwen¹,Xu Kang¹,Zhang Lili¹,Liu Erfu¹,Hu Weida²^ORCID,Wang Xiaomu³,Miao Feng¹^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

3. School of Electronic Science and Technology, Nanjing University, Nanjing 210093, China

Funder

Fund of the Shanghai Science and Technology foundation

National Natural Science Foundation of China

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Jiangsu Province (Jiangsu Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4995400

Reference40 articles.

1. Single-layer MoS2 transistors

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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4. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

5. A subthermionic tunnel field-effect transistor with an atomically thin channel

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