Nature of Photoconductivity in Self-Powered Single-Atomic-Layered Nb-Doped WSe<sub>2</sub> Phototransistors-Reference-Cited by-同舟云学术

Nature of Photoconductivity in Self-Powered Single-Atomic-Layered Nb-Doped WSe₂ Phototransistors

Published:2023-08-01 Issue:8 Volume:10 Page:2930-2940
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Park Jihyang¹^ORCID,Kim Seunggyu¹,Yang Mino²^ORCID,Hosono Hideo³^ORCID,Park Kyumin¹,Yoon Jeechan¹^ORCID,Bak Jina¹,You Bolim¹,Park Sang-Won³⁴^ORCID,Hahm Myung Gwan¹^ORCID,Lee Moonsang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea

2. Korea Basic Science Institute Seoul, 6-7, Goryeodae-ro 22-gil, Seongbuk-gu, Seoul 02841, Republic of Korea

3. MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

4. Department of Chemical and Materials Engineering, University of Suwon, 17 Wauan-gil, Bongdam-eup, Hwaseong 18323, Gyeonggi, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00654

Reference51 articles.

1. WSe 2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications