Direct probing of the selective electron and hole accumulation at organic/organic interfaces in a triple-layer organic device by time-resolved optical second harmonic generation-Reference-Cited by-同舟云学术

Direct probing of the selective electron and hole accumulation at organic/organic interfaces in a triple-layer organic device by time-resolved optical second harmonic generation

Published:2011-08-22 Issue:8 Volume:99 Page:083301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Le,Taguchi Dai,Manaka Takaaki,Iwamoto Mitsumasa

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3626851

Reference18 articles.

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3. Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

4. Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere

5. Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes

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