Quantitative electron channeling measurements for high sensitivity surface analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103953
Reference6 articles.
1. Electron channeling patterns in the scanning electron microscope
2. MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE
3. Universal relation between electron channeling line intensity and thickness of disordered layers on single crystals
4. A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers;Materials Science and Engineering: B;1998-10
2. Characterization of surface damage in dry-etched InP;Semiconductor Science and Technology;1997-06-01
3. Characterization of thin buffer layers for strongly mismatched heteroepitaxy;Thin Solid Films;1996-09
4. Analytical, structural and electrical characterization of SiGe layers by electron microbeam techniques;Mikrochimica Acta;1994-12
5. Electron channeling patterns of a-axis and c-axis YBa2Cu3O7−δ thin films;Journal of Materials Research;1991-12
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