Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer-Reference-Cited by-同舟云学术

Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

Published:2014-10-06 Issue:14 Volume:105 Page:141601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pantzas Konstantinos¹²,Patriarche Gilles¹,Talneau Anne¹,Youssef Jamal Ben³

Affiliation:

1. CNRS-LPN, Route de Nozay, F-91460 Marcoussis, France

2. Institut P', CNRS-Université de Poitiers - ENSMA - UPR 3346, SP2MI - Téléport 2 Bd Marie Pierre Curie, B.P. 30179, F-86962, Futuroscope Chasseneuil Cedex, France

3. Laboratoire de Magnetisme de Bretagne, 6 avenue Le Gorgeu, 29238 Brest Cedex 3, France

Funder

CNRS RENATECH

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896978

Reference15 articles.

1. Demonstration of an optical isolator by use of a nonreciprocal phase shift

2. Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift

3. Elimination of a back-reflected TE mode in a TM-mode optical isolator with a Mach–Zehnder interferometer

4. Optical Nonreciprocal Devices with a Silicon Guiding Layer Fabricated by Wafer Bonding

5. Interferometric optical isolator employing a nonreciprocal phase shift operated in a unidirectional magnetic field

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