An electron‐spin resonance study of the structure of plasma‐deposited silicon‐oxynitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339686
Reference16 articles.
1. Plasma‐enhanced growth and composition of silicon oxynitride films
2. Gap states in silicon nitride
3. Defects in amorphous Si-N films prepared by RF sputtering
4. Annealing behavior of hydrogenated amorphous silicon—nitrogen alloy films prepared by sputtering
5. Defect states and donors in thermally annealed or post‐hydrogenated chemically vapor‐deposited amorphous SiNxalloy
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1. Optical losses of multilayer stacks synthesized with silicon oxynitride by r.f. magnetron sputtering;Thin Solid Films;1998-11
2. Synthesis and physicochemical characterization of silicon oxynitride thin films prepared by rf magnetron sputtering;Applied Optics;1997-08-01
3. ⋅Si≡Si3defect at thermally grown (111)Si/Si3N4interfaces;Physical Review B;1995-09-15
4. Silicon nitride and oxynitride films;Materials Science and Engineering: R: Reports;1994-07
5. Chemical Vapor Deposition Under Plasma Conditions;Film Deposition by Plasma Techniques;1992
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