Optical properties of (AlxGa1−x)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366963
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5. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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