Investigation of deep-level defects in Cu(In,Ga)Se2 thin films by two-wavelength excitation photo-capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826144
Reference20 articles.
1. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
2. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
3. CIGS absorbers and processes
4. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
5. The electronic structure of chalcopyrites-bands, point defects and grain boundaries
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1. Identification of deep level defects in CdTe solar cells using transient photo-capacitance spectroscopy;Japanese Journal of Applied Physics;2020-12-11
2. Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis;Progress in Photovoltaics: Research and Applications;2019-12-26
3. Influence of potassium treatment on electronic properties of Cu(In1− x Ga x )(Se1− y S y )2 solar cells studied by steady state photo-capacitance and admittance spectroscopy;Japanese Journal of Applied Physics;2018-07-12
4. Investigation of Deep-level Defects in CuGaSe2Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy;Journal of Physics: Conference Series;2017-06
5. Effect of Cu/Ga ratio on deep-level defects in CuGaSe_2 thin films studied by photocapacitance measurements with two-wavelength excitation;Applied Optics;2017-05-05
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