Charged exciton emission at 1.3μm from single InAs quantum dots grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2093927
Reference20 articles.
1. A Quantum Dot Single-Photon Turnstile Device
2. Indistinguishable photons from a single-photon device
3. Generating visible single photons on demand with single InP quantum dots
4. Dominance of charged excitons in single-quantum-dot photoluminescence spectra
5. Formation of the charged exciton complexes in self-assembled InAs single quantum dots
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1. Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant;Japanese Journal of Applied Physics;2014-05-27
2. Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating;Nanotechnology;2013-12-20
3. Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy;Applied Physics Letters;2013-08-05
4. Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant;Japanese Journal of Applied Physics;2011-06-20
5. Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant;Japanese Journal of Applied Physics;2011-06-01
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