Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating-Reference-Cited by-同舟云学术

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Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating

Published:2013-12-20 Issue:3 Volume:25 Page:035204
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Muñoz-Matutano G,Rivas D,Ricchiuti A L,Barrera D,Fernández-Pousa C R,Martínez-Pastor J,Seravalli L,Trevisi G,Frigeri P,Sales S

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=3/a=035204/pdf

Reference35 articles.

1. Semiconductor Nanostructures

2. An entangled-light-emitting diode

3. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

4. Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

5. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths

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1. Single-Exciton Amplified Spontaneous Emission in Thin Films of CsPbX3 (X = Br, I) Perovskite Nanocrystals;The Journal of Physical Chemistry Letters;2019-09-23

2. Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots;Applied Physics Letters;2019-07-08

3. Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics;Physical Review Applied;2019-05-15

4. Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer;Journal of Applied Physics;2017-05-14

5. InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD;Semiconductors;2017-05

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