Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer-Reference-Cited by-同舟云学术

Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer

Published:2017-05-14 Issue:18 Volume:121 Page:184302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Olbrich Fabian¹,Kettler Jan¹,Bayerbach Matthias¹,Paul Matthias¹,Höschele Jonatan¹,Portalupi Simone Luca¹,Jetter Michael¹^ORCID,Michler Peter¹

Affiliation:

1. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983362

Reference50 articles.

1. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

2. Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

3. Temperature dependence of the excitonic band gap inInxGa1−xAs∕GaAsself-assembled quantum dots

4. 1.3 μm room-temperature GaAs-based quantum-dot laser

5. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser

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