Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics-Reference-Cited by-同舟云学术

Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Published:2000-04-03 Issue:14 Volume:76 Page:1881-1883
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim L.,Kim J.,Jung D.,Roh Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126199

Reference7 articles.

1. Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer

2. Preparation and Characterization of PZT Thin Films on CeO2(111)/Si(111) Structures

3. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi$_{\bf 2}$Ta$_{\bf 2}$O$_{\bf 9}$ as the Ferroelectric Material

4. Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials

5. High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

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