Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures-Reference-Cited by-同舟云学术

Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Published:2005-08 Issue:3 Volume:98 Page:033529
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Markov A. V.,Pearton S. J.,Kolin N. G.,Merkurisov D. I.,Boiko V. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2006223

Reference39 articles.

1. M. S. Shur and M. A. Khan, inGaN and AlGaN Devices: Field Effect Transistors and Photodetectors, GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach, Netherlands, 1999), pp. 47–92.

2. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

3. Optical detection of magnetic resonance in electron-irradiated GaN

4. Defect Donor and Acceptor in GaN

5. Deep centers in n-GaN grown by reactive molecular beam epitaxy

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

2. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

3. Low‐Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs;Advanced Materials Technologies;2023-01-29

4. Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation;Applied Physics Letters;2021-09-27

5. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors;ECS Journal of Solid State Science and Technology;2021-05-01