Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125720
Reference7 articles.
1. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures
2. Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode
3. Nature and origins of stacking faults from a ZnSe/GaAs interface
4. Experiments on the depolarization near-field scanning optical microscope
5. Near-field scanning photoluminescence measurements using an uncoated fiber tip: A potential high resolution diagnostic technique for semiconductor devices
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