Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures-Reference-Cited by-同舟云学术

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Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

Published:1999-12-20 Issue:25 Volume:75 Page:3944-3946
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lüerßen D.,Bleher R.,Richter H.,Schimmel Th.,Kalt H.,Rosenauer A.,Litvinov D.,Kamilli A.,Gerthsen D.,Ohkawa K.,Jobst B.,Hommel D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125502

Reference11 articles.

1. Effect of surface treatment on visible luminescence of porous silicon: Correlation with hydrogen and oxygen terminators

2. Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode

3. Structural study of defects induced during current injection to II–VI blue light emitter

4. Influence of p-type doping on the degradation of ZnSe laser diodes

5. Transmission electron microscopy and cathodoluminescence studies of extended defects in electron-beam-pumped Zn1−xCdxSe/ZnSe blue-green lasers

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3. Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well;physica status solidi (RRL) - Rapid Research Letters;2018-01-15

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