The impact of various annealing methods on silicon implant activation properties for GaAs crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343892
Reference11 articles.
1. Annealing of Ion‐Implanted GaAs in a Controlled Atmosphere
2. Transient Thermal Processing of GaAs
3. Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique
4. Thermal Annealing and Cooling-Rate Dependent Electronic Properties of Bulk GaAs Crystals
5. Experimental requirements for quantitative mapping of midgap flaw concentration in semi‐insulating GaAs wafers by measurement of near‐infrared transmittance
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 4 K photoluminescence characterization of silicon implanted GaAs;Zeitschrift für Physik B Condensed Matter;1996-03
2. Comparison of electrical characteristics of P+Si and B+Si coimplanted active layers in SI GaAs;Physica Status Solidi (a);1993-10-16
3. Photoluminescence and secondary‐ion mass spectrometry studies of rapid‐thermal‐annealed silicon coimplanted with phosphorus in GaAs;Applied Physics Letters;1991-08-19
4. Deep levels in Si-implanted and rapid thermal annealed semi-insulating gaAs;Journal of Electronic Materials;1991-02
5. Ion Implantation in Microelectronics—III-V Compounds;IETE Journal of Research;1990-05
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