Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96837
Reference6 articles.
1. Rapid Thermal Annealing in III-V Compounds
2. Diffusion phenomena and defect generation in rapidly annealed GaAs
3. The role of defects in the diffusion and activation of impurities in ion implanted semiconductors
4. Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits
5. Crystallographic slip in GaAs wafers annealed using incoherent radiation
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