Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103005
Reference16 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Two‐dimensional array of high‐power strained quantum well lasers with λ=0.95 μm
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3. Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides;Semiconductors;2008-09
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