Dislocation dynamics in strain relaxation in GaAsSb∕GaAs heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2245206
Reference29 articles.
1. Comparison of In[sub 0.33]Al[sub 0.67]As/In[sub 0.34]Ga[sub 0.66]As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
2. Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique
3. Stress and Relief of Misfit Strain of Ge/Si(001)
4. Stress evolution during Fe(001) epitaxy on GaAs(001)
5. Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain relaxation in low-mismatched GaAs/GaAs1-xSbx/GaAs heterostructures;Acta Materialia;2019-01
2. Effect of strain on band alignment of GaAsSb/GaAs quantum wells;Journal of Applied Physics;2017-07-28
3. Critical thickness of GaN on AlN: impact of growth temperature and dislocation density;Semiconductor Science and Technology;2017-06-28
4. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials;Journal of Applied Physics;2014-10-07
5. Formation energies and equilibrium configurations of dislocation arrays with alternating Burgers vectors in layered heterostructures;Journal of Crystal Growth;2010-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3