Defects in plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348664
Reference14 articles.
1. Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH4
2. Properties of plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination
3. Density of the gap states in undoped and doped glow discharge a-Si:H
4. Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilane
5. Limitations of the integrated sub‐band‐gap absorption for determining the density of defects in amorphous silicon
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon;Journal of Applied Physics;2002-01-15
2. Trapping and Recombination of Photogenerated Carriers in As-Grown High-Temperature-Annealed and Light-Soaked a-Si:H;Japanese Journal of Applied Physics;1993-08-15
3. Properties of hydrogenated amorphous silicon prepared by alternatively repeating chemical‐vapor deposition from disilane and hydrogen plasma treatment;Journal of Applied Physics;1993-08-15
4. Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H;Japanese Journal of Applied Physics;1992-12-15
5. Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method;Japanese Journal of Applied Physics;1992-10-01
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