Green electroluminescence from Tb4O7 films on silicon: Impact excitation of Tb3+ ions by hot carriers-Reference-Cited by-同舟云学术

Green electroluminescence from Tb4O7 films on silicon: Impact excitation of Tb3+ ions by hot carriers

Published:2016-02 Issue:5 Volume:108 Page:051113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Chen¹,Lv Chunyan¹²,Jiang Miaomiao¹,Zhou Junwei¹,Li Dongsheng¹,Ma Xiangyang¹,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

2. School of Engineering, Huzhou University, Huzhou 313000, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941430

Reference22 articles.

1. Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths

2. Electroluminescence efficiencies of erbium in silicon-based hosts

3. Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

4. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

5. Rare-Earth Implanted MOS Devices for Silicon Photonics

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