Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893783
Reference24 articles.
1. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
2. Memory Metamaterials
3. Neuromorphic, Digital, and Quantum Computation With Memory Circuit Elements
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