An amorphous silicon photodiode with 2 THz gain‐bandwidth product based on cycling excitation process-Reference-Cited by-同舟云学术

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An amorphous silicon photodiode with 2 THz gain‐bandwidth product based on cycling excitation process

Published:2017-09-04 Issue:10 Volume:111 Page:101104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Lujiang¹,Yu Yugang²,Zhang Alex Ce¹,Hall David¹,Niaz Iftikhar Ahmad¹^ORCID,Raihan Miah Mohammad Abu¹,Liu Yu-Hsin¹,Lo Yu-Hwa¹²

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA

2. Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0418, USA

Funder

National Science Foundation (NSF)

Defense Advanced Research Projects Agency (DARPA)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5001170

Reference22 articles.

1. Fiber‐Optic Communication Systems

2. Recent Advances in Telecommunications Avalanche Photodiodes

3. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

4. Integrated 1550 nm photoreceiver with built-in amplification and feedback mechanisms

5. Non-Geiger mode single photon detector with multiple amplification and gain control mechanisms

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