Role of Hg in junction formation in ion‐implanted HgCdTe

Author:

Bubulac L. O.,Tennant W. E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 56 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of the n− region formation process in n-on-p HgCdTe devices;Infrared Physics & Technology;2024-11

2. Junction Formation Processing of MWIR Small-Pitch HgCdTe Detectors;IEEE Transactions on Electron Devices;2024-09

3. 2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe;Journal of Electronic Materials;2023-02-06

4. HgCdTe Device Technology;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

5. Modeling and characteristics of MWIR HgCdTe APD at different post-annealing processes;Infrared Physics & Technology;2022-12

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