Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124282
Reference11 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation
3. A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells
4. Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixing
5. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
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1. InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range;Nanoscale;2017
2. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
3. Monolithically integrated 4x4 SOA switch fabricated using quantum well intermixing;SPIE Proceedings;2009-02-12
4. Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy;Journal of Applied Physics;2008-04
5. Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures;IEEE Journal of Selected Topics in Quantum Electronics;2008
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