In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2740200
Reference11 articles.
1. Growth of short-period InAs∕GaSb superlattices
2. nBn detector, an infrared detector with reduced dark current and higher operating temperature
3. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
4. Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor
5. UV-O3 preparation of InAs (100) surfaces prior to MBE growth
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1. Predicting surface modification of InAs nanowires on laser irradiation using transient thermal simulation and time evolution of Raman spectra;Journal of Alloys and Compounds;2018-02
2. High-temperature thermal stability study of 1 nm Al2O3deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy;Journal of Physics D: Applied Physics;2014-01-03
3. High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface;Applied Surface Science;2013-11
4. Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces;Applied Surface Science;2013-07
5. Native oxides and carbon contamination removal from InAs(100) surface by molecular hydrogen flow at moderate substrate temperatures: Stoichiometric and morphological studies;Journal of Applied Physics;2010-03
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