Investigation of many‐body effects in one‐side modulation‐doped InP‐InGaAs heterostructure-Reference-Cited by-同舟云学术

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Investigation of many‐body effects in one‐side modulation‐doped InP‐InGaAs heterostructure

Published:1996-02-19 Issue:8 Volume:68 Page:1105-1107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cardoso A. J. C.,Morais P. C.,Cox H. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115727

Reference12 articles.

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature Magnetism in Carbon Dots and Enhanced Ferromagnetism in Carbon Dots-Polyaniline Nanocomposite;Scientific Reports;2017-05-19

2. Influence of the optical control in the lateral transport of carriers in InGaAs∕GaAs one-side modulation-doped quantum wells;Journal of Applied Physics;2007-08-15

3. Experimental evidence for dislocation-related gettering in metamorphic InP∕InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate;Journal of Applied Physics;2006-08

4. Photoluminescence studies of confined states in AlGaAs/GaAs asymmetric quantum well;Physica E: Low-dimensional Systems and Nanostructures;2006-07

5. Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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