Solid phase recrystallization in molecular beam deposited gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100869
Reference10 articles.
1. Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model
2. Interface structure evolution and impurity effects during solid‐phase‐epitaxial growth in GaAs
3. Solid‐phase crystal growth of molecular‐beam‐deposited amorphous GaAs
4. Direct measurement of solid‐phase epitaxial growth kinetics in GaAs by time‐resolved reflectivity
5. Impurity‐induced enhancement of the growth rate of amorphized silicon during solid‐phase epitaxy: A free‐carrier effect
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2. Control of crystalline orientation of germanium by lateral graphoepitaxy on SiO2 microstructures;Journal of Applied Physics;2005-06
3. Lateral Graphoepitaxy of Germanium Controlled by Microstructures on SiO2Surface;Japanese Journal of Applied Physics;2004-05-21
4. Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method;Japanese Journal of Applied Physics;1993-09-15
5. Cost Perspectives of GaAs Thin-Film Solar Cells;Tenth E.C. Photovoltaic Solar Energy Conference;1991
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