Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi2 on Si(100) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1377620
Reference20 articles.
1. Observation and analysis of epitaxial growth of CoSi2on (100) Si
2. Interfacial and surface energetics of CoSi2
3. Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy
4. X-ray reflectivity and diffuse-scattering study ofCoSi2layers in Si produced by ion-beam synthesis
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4. Dependence of CoSi2Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less;Japanese Journal of Applied Physics;2006-05-09
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