Angular distributions of H-induced HD and D2 desorptions from the Si(100) surfaces
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2163339
Reference26 articles.
1. Structure of the H-saturated Si(100) surface
2. Role of bond-strain in the chemistry of hydrogen on the Si(100) surface
3. Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D
4. H atom abstraction of D adsorbed on Si(100): dynamical evidence for an Eley-Rideal mechanism
5. Dynamics of the H atom abstraction of D adsorbed on Si(100)
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growing Fragmented Potentials for Gas–Surface Reactions: The Reaction between Hydrogen Atoms and Hydrogen-Terminated Silicon (111);The Journal of Physical Chemistry C;2012-03-27
2. Time-of-flight distributions of HD molecules abstracted at a Si(100) surface;Surface Science;2009-08
3. Adsorption and abstraction of atomic hydrogen on the Si(110) surfaces;Surface Science;2008-06
4. Response to “Comment on ‘Angular distributions of H-induced HD and D2 desorptions from the Si(100) surfaces’ [J. Chem. Phys. 128, 017101 (2008)]”;The Journal of Chemical Physics;2008-01-07
5. Comment on “Angular distributions of H-induced HD and D2 desorptions from the Si(100) surfaces” [J. Chem. Phys. 124, 054715 (2006)];The Journal of Chemical Physics;2008-01-07
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