Characterization of interfacial atomic steps in GaAs/AlAs superlattices by transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99899
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1. A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
2. A New High-Electron Mobility Monolayer Superlattice
3. Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxy
4. Transmission electron microscope observation of lattice image of AlxGa1−xAs‐AlyGa1−yAs superlattices with high contrast
5. Determination of the atomic configuration at semiconductor interfaces
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1. Experimental investigation of structures of interior interfaces in GaAs;Journal of Applied Physics;1999-12-15
2. Comparison of the information content in 〈110〉 - and 〈100〉 -projected high-resolution transmission electron microscope images for the quantitative analysis of AlAs/GaAs interfaces;Ultramicroscopy;1994-01
3. Analysis of Interface Dynamics in Solid-State Phase Transformations by In Situ Hot-Stage High-Resolution Transmission Electron Microscopy;MRS Proceedings;1994
4. High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection;Japanese Journal of Applied Physics;1993-06-15
5. Long range gallium segregation in the AlAs layers of GaAs/AlAs superlattices;Applied Physics Letters;1992-07-27
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