Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1598631
Reference21 articles.
1. Silicon Carbide Technology in New Era
2. Doping of SiC by Implantation of Boron and Aluminum
3. Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation
4. Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H–SiC
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