Ru-doped La0.6Sr0.4MnO3 thin films as a coercivity tunable electrode for magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1923199
Reference15 articles.
1. Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
2. Tunneling Magnetoresistance above Room Temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3Junctions
3. Engineered Interface of Magnetic Oxides
4. High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
5. Very large magnetoresistance and coherent switching in half-metallic manganite tunnel junctions
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2. Interfacial Engineering of Ferromagnetism in Epitaxial Manganite/Ruthenate Superlattices via Interlayer Chemical Doping;ACS Applied Materials & Interfaces;2019-02-18
3. Emergence of Topological Hall Effect in Half-Metallic Manganite Thin Films by Tuning Perpendicular Magnetic Anisotropy;Journal of the Physical Society of Japan;2018-07-15
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