Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2143126
Reference13 articles.
1. Review of III-nitride optoelectronic materials for light emission and detection
2. Critical issues in AlxGa1−xN growth
3. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
4. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer
5. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
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