Defect generation in 3.5 nm silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112854
Reference20 articles.
1. Trap generation and electron detrapping in SiO2during high‐field stressing of metal‐oxide‐semiconductor structures
2. Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements
3. Trap generation and occupation dynamics in SiO2under charge injection stress
4. Correlation of trap creation with electron heating in silicon dioxide
5. Charge generation in thin SiO2 polysilicon-gate MOS capacitors
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