New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems-Reference-Cited by-同舟云学术

New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems

Published:1984-06 Issue:11 Volume:44 Page:1027-1029
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Capasso F.,Kasper B.,Alavi K.,Cho A. Y.,Parsey J. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.94633

Reference5 articles.

1. New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy

2. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

3. Performance of In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP avalanche photodiodes

4. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions

5. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes

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1. Molecular Beam Epitaxy Grown Al ( Ga ) InAs : Schottky Contacts and Deep Levels;Journal of The Electrochemical Society;1991-09-01

2. Photodetectors for Long-Wavelength Lightwave Systems;Optoelectronic Technology and Lightwave Communications Systems;1989

3. InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain‐bandwidth product;Applied Physics Letters;1987-11-02

4. Molecular-beam epitaxial growth of graded band-gap quaternary GaxAlyIn1−x−yAs multilayer heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh ionization ratio;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1987-05

5. Theory of the GaInAs/AlInAs-doped quantum well APD: A new low-noise solid-state photodetector for lightwave communication systems;IEEE Transactions on Electron Devices;1986-11