Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure-Reference-Cited by-同舟云学术

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Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure

Published:1997-11-15 Issue:10 Volume:82 Page:4810-4815
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wei Shiqiang,Oyanagi Hiroyuki,Kawanami Hitoshi,Sakamoto Kunihiro,Sakamoto Tsunenori,Tamura Kazuhisa,Saini Naurang L.,Uosaki Kohei

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366340

Reference30 articles.

1. Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium

2. Local structure around Ga and As doped in InP studied by fluorescence-detected EXAFS

3. Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes

4. Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys

5. Impurity effect on the growth of dislocation‐free InP single crystals

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1. Segregation mechanism of arsenic dopants at grain boundaries in silicon;Science and Technology of Advanced Materials: Methods;2021-01-01

2. In situ determination of electronic structure at solid/liquid interfaces;Journal of Electron Spectroscopy and Related Phenomena;2017-11

3. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal;Physica B: Condensed Matter;2017-02

4. Strain- and Defect-Mediated Thermal Conductivity in Silicon Nanowires;Nano Letters;2014-06-09

5. Extent and feature of lattice distortions around Ga impurity atoms in InSb single crystal;Physical Review B;2013-03-08

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