First principles study on InP (001)-(2 × 4) surface oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4794826
Reference41 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
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3. Interface states model for III–V oxide interfaces
4. First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO
5. Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces
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