Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy-Reference-Cited by-同舟云学术

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Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy

Published:2011-11-28 Issue:22 Volume:99 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Chenxin,Xu Zhongguang,Huo Zongliang,Yang Rong,Zheng Zhiwei,Cui Yanxiang,Liu Jing,Wang Yumei,Shi Dongxia,Zhang Guangyu,Li Fanghua,Liu Ming

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3664222

Reference18 articles.

1. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

2. Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

3. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy

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