Analysis of the residual stresses, the biaxial modulus, and the interfacial fracture energy of low-k dielectric thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2386939
Reference18 articles.
1. Low Dielectric Constant Materials for ULSI Interconnects
2. Low dielectric constant materials for microelectronics
3. Reliability of Metal Interconnects
4. Integration challenges of porous ultra low-k spin-on dielectrics
5. Determination of elastic modulus and thickness of surface layers by ultrasonic surface waves
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1. Strain engineering 2D MoS2 with thin film stress capping layers;2D Materials;2021-07-05
2. A critical comparison between XRD and FIB residual stress measurement techniques in thin films;Thin Solid Films;2014-12
3. Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding;Springer Series in Reliability Engineering;2011
4. Effective biaxial modulus and strain energy density of ideally (hkl)-fiber-textured hexagonal, tetragonal and orthorhombic films;Applied Surface Science;2008-12
5. Effective biaxial modulus and strain energy density of ideally (hkl)-fiber-textured cubic polycrystalline films;Applied Surface Science;2008-04
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