SIMPLE TECHNIQUE FOR VERY THIN SiO2FILM THICKNESS MEASUREMENTS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1755124
Reference2 articles.
1. Thickness measurement of silicon dioxide layers by ultraviolet-visible interference method
2. Refractive Index of SiO2 Films Grown on Silicon
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1. Optical and ion-scattering study of SiO2layers thermally grown on 4H-SiC;Semiconductor Science and Technology;2002-06-12
2. Orientation dependence of infrared spectra on thermal oxidation and subsequent etching of single crystal Si;Solid State Communications;1999-07
3. Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-09
4. Physical characterization of ultrathin anodic silicon oxide films;Journal of Applied Physics;1994-09
5. Disorder in vitreous SiO2: The effect of thermal annealing on structural properties;Journal of Applied Physics;1990-10
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