Orientation dependence of infrared spectra on thermal oxidation and subsequent etching of single crystal Si-Reference-Cited by-同舟云学术

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Orientation dependence of infrared spectra on thermal oxidation and subsequent etching of single crystal Si

Published:1999-07 Issue:8 Volume:111 Page:421-426
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Hirata T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference33 articles.

1. VLSI Technology;Katz,1983

2. Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor Deposition

3. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

4. Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

5. Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantifying silica in filter-deposited mine dusts using infrared spectra and partial least squares regression;Analytical and Bioanalytical Chemistry;2014-05-16

2. Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films;Journal of Applied Physics;2002-02-15

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