Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1525046
Reference19 articles.
1. Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2
2. Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2
3. Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films
4. Band gap engineering of amorphous silicon quantum dots for light-emitting diodes
5. Quantum Confined Luminescence inSi/SiO2Superlattices
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