Carrier‐induced phase shift and absorption in a semiconductor laser waveguide under current injection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97995
Reference4 articles.
1. Measurements of threshold carrier density of III‐V semiconductor laser diodes
2. Carrier lifetime measurement for determination of recombination rates and doping levels of III‐V semiconductor light sources
3. Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
4. Semiconducting and other major properties of gallium arsenide
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2×2 Mach–Zehnder interferometric switch based on hetero‐n‐i‐p‐i quantum wells;Applied Physics Letters;1995-05-15
2. Monolithic integration of an amplifier and a phase modulator fabricated in a GRINSCH-SQW structure by placing the junction below the quantum well;IEEE Photonics Technology Letters;1993-09
3. Simple measurement of carrier induced refractive-index change in InGaAsP pin ridge waveguide structures;Electronics Letters;1991
4. Theoretical analysis of tuning properties for a phase-tunable DFB laser;IEEE Journal of Quantum Electronics;1988-12
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